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IRF 3205 MFET N-Channel Transistor

46.00 inc GST

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IRF 3205 MFET Features
Continuous Drain Current, (VGS @ 10V) : 110 A
Continuous Drain Current, (VGS @ 10V) : 80 A
Pulsed Drain Current : 390 A
Power Dissipation : 200 W
Linear Derating Factor : 1.3 W/°C
Gate-to-Source Voltage : ± 20 V
Avalanche Current : 62 A
Repetitive Avalanche Energy 20 mJ
Peak Diode Recovery : 5.0 V/ns
Operating Junction and Storage Temperature Range : -55 to + 175 °C
Soldering Temperature, for 10 seconds : 300 (1.6mm from case ) °C
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

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